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NovuSiC® MOSFET Officially Released
2023-05-04
1200V 12mΩ NovuSiC® MOSFET has been mass-produced, and the average yield of the first batch of mass production is 80%.
NovuSiC® MOSFET Officially Released
2023-03-27
Novusem rolled out NovuSiC® MOSFET (G1) and announced the mass production schedule of G2.
"Power for the Future"- Novusem's SiC New Product Launch Event end successfully
2022-07-04
Novusem held a product launch to debut NovuSiC® EJBS™ and the Silicon-based MCR® diode series.
Novusem Signs Long-term Strategic Cooperation Agreement with Taiwan's Episil
2023-03-27
Episil will provide Novusem with access to its SiC process platform, giving top priority to Novusem's OEM products.
UESTC establishes an engineering practice education base at Novusem
2023-03-27
the School of Integrated Circuit Science and Engineering of UESTC and Novusem signed the Talent Strategic Cooperation Agreement.
Novusem Certified as a High-tech Enterprise
2023-03-27
Novusem has been successfully certified as a high-tech enterprise in 2022, which is both an honor and a motivational force.
New Office, New Image: Novusem Officially Moves into its New Home
2023-03-27
At the end of 2022, the new office project of Novusem was officially delivered and a move-in ceremony was held.
Novusem’s Pre-A round of financing complete successfully NovuSiC MOSFET will be unveiled at the end
2022-08-18
Novusem—the high-tech enterprise focusing on the design and development of SiC power devices, completed Pre-A round of financing.
Forward inrush current of over 12 times the rated current!A breakthrough in local automotive-grade S
2022-10-18
The mass-produced NovuSiC® EJBS™ has a forward inrush current of over 12 times the rated current.