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      NovuSiC® MOSFET Officially Released
      2023-05-04
      1200V 12mΩ NovuSiC® MOSFET has been mass-produced, and the average yield of the first batch of mass production is 80%.
      NovuSiC® MOSFET Officially Released
      2023-03-27
      Novusem rolled out NovuSiC® MOSFET (G1) and announced the mass production schedule of G2.
      "Power for the Future"- Novusem's SiC New Product Launch Event end successfully
      2022-07-04
      Novusem held a product launch to debut NovuSiC® EJBS™ and the Silicon-based MCR® diode series.
      Novusem Signs Long-term Strategic Cooperation Agreement with Taiwan's Episil
      2023-03-27
      Episil will provide Novusem with access to its SiC process platform, giving top priority to Novusem's OEM products.
      UESTC establishes an engineering practice education base at Novusem
      2023-03-27
      the School of Integrated Circuit Science and Engineering of UESTC and Novusem signed the Talent Strategic Cooperation Agreement.
      Novusem Certified as a High-tech Enterprise
      2023-03-27
      Novusem has been successfully certified as a high-tech enterprise in 2022, which is both an honor and a motivational force.
      New Office, New Image: Novusem Officially Moves into its New Home
      2023-03-27
      At the end of 2022, the new office project of Novusem was officially delivered and a move-in ceremony was held.
      Novusem’s Pre-A round of financing complete successfully NovuSiC MOSFET will be unveiled at the end
      2022-08-18
      Novusem—the high-tech enterprise focusing on the design and development of SiC power devices, completed Pre-A round of financing.
      Forward inrush current of over 12 times the rated current!A breakthrough in local automotive-grade S
      2022-10-18
      The mass-produced NovuSiC® EJBS™ has a forward inrush current of over 12 times the rated current.
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