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    MCR®Wafer
    An ideal silicon-based diode built for high breakdown voltage, low leakage current, low forward voltage, and high operational junction temperature.

    Product: 

    MCR® (MOS-Controlled Rectifier) is an ideal silicon-based diode built for high breakdown voltage, low leakage current, low forward voltage, and high operational junction temperature. It can be applied to applications such as industrial power supplies, energy storage, and PV.

    Advantages: 

    ⬤ Low leakage current (nA)

    ⬤ Low forward voltage and high breakdown voltage

    ⬤ 175°C operating junction temperature

    ⬤ High surge current capability

    Applications:

    (1) High-frequency rectification for energy storage: In 500W portable energy storage power applications, compared with FRD, Novusem MCR® devices reduce total system loss by 18.7% and junction temperature by 13°C. The frequency increases by 50% and the magnetic device volume reduces by about 30% without additional loss.

    (2) Anti-reverse connection for energy storage: Novusem MCR® devices reduce system loss by 16% and junction temperature by 10°C while improving charging efficiency by 1.25% compared to competing offerings.

    Diodes MCR®Wafer Specifications

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